Mission of the
Reports, Patents and Publications
Videos and Photographs
The Center for the
Strategic Applications of Nuclear Sensors
A variety of detector types and materials are studied in the SMART Laboratory with an emphasis on semiconductor materials and devices. Although semiconductor detectors are a specialty, other novel detectors based on gas-filled designs and optical designs are also fabricated and studied by SMART Laboratory researchers.
An assortment of compound semiconductor materials at various stages of detector processing and fabrication. Shown are samples of HgI2, CdZnTe, GaAs, and PbI2 (from D.S. McGregor and H. Hermon, Nucl. Instrum. and Meth., A 395 (1997) 101 -124.)
Representative Recently Funded and Completed Projects
Shown is a cross section of a typical "self-biased" high-purity epitaxial GaAs neutron detector. The device operates on its own contact potential and does not requires an external power supply to operate. A coating of LiF or B makes the devices sensitive to neutrons.
A pixelated GaAs neutron detector array designed for neutron imaging applications. The chip has 32 detectors read out simultaneously.
A bulk GaAs neutron detector completely designed and fabricated by Dr. McGregor and his students in the S.M.A.R.T. Laboratory. Many such detectors have been shipped from the S.M.A.R.T. Laboratory to DOE National Laboratories, such as Lawrence Livermore National Lab, Sandia National Lab, and Argonne National Lab.
A one cubic cm by volume CdZnTe trapezoidal detector designed to overcome deleterious effects from 'hole trapping'. The unique patented design uses numerous effects in unison to achieve high energy resolution at room temperature. The device shown yielded 2.67% FWHM at 662 keV with ordinary commercially available NIM electronics.