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Plasma Lab ICP-RIE Return to Equipment Listing |
The Oxford Plasma Lab inductively-coupled plasma (ICP) reactive ion etching (RIE) system, locateed in the larger class 100 clean room, is used to etch detailed cavities into semiconductor substrates. The system can etch features into GaAs, Si and SiC from a few microns up to hundreds of microns deep.
Oxford Plasma Lab 100 ICP Reactive Ion Etch System
Argon plasma glow from the Oxford ICP-RIE.
The higher density of the inductively coupled plasma in the Oxford RIE allows for higher etch rates.
The ICP-RIE is used to etch deep microstructure features into semiconductor substrates.
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